Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements

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The performance of silicon diodes in high energy physics experiments deteriorates with irradiation. Performance properties of proton and pion irradiated samples are studied with CV/IV and TCT measurements. CV/IV measurements offer the possibility to study the full depletion voltage, leakage current...

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Detalles Bibliográficos
Autor principal: Sumida, Hiroki
Lenguaje:eng
Publicado: 2014
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/1753846
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author Sumida, Hiroki
author_facet Sumida, Hiroki
author_sort Sumida, Hiroki
collection CERN
description The performance of silicon diodes in high energy physics experiments deteriorates with irradiation. Performance properties of proton and pion irradiated samples are studied with CV/IV and TCT measurements. CV/IV measurements offer the possibility to study the full depletion voltage, leakage current and effective doping concentration. TCT measurements are used to investigate the electric field, charge collection and type inversion in function of the fluence. An annealing study is performed with one 9.64E13 p/cm2 irradiated sample up to a total annealing time of 1167 min at 60C.
id cern-1753846
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
record_format invenio
spelling cern-17538462019-09-30T06:29:59Zhttp://cds.cern.ch/record/1753846engSumida, HirokiStudy of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurementsDetectors and Experimental TechniquesThe performance of silicon diodes in high energy physics experiments deteriorates with irradiation. Performance properties of proton and pion irradiated samples are studied with CV/IV and TCT measurements. CV/IV measurements offer the possibility to study the full depletion voltage, leakage current and effective doping concentration. TCT measurements are used to investigate the electric field, charge collection and type inversion in function of the fluence. An annealing study is performed with one 9.64E13 p/cm2 irradiated sample up to a total annealing time of 1167 min at 60C. CERN-STUDENTS-Note-2014-184oai:cds.cern.ch:17538462014-09-05
spellingShingle Detectors and Experimental Techniques
Sumida, Hiroki
Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements
title Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements
title_full Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements
title_fullStr Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements
title_full_unstemmed Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements
title_short Study of Proton and Pion Irradiated Silicon Pad Detectors with CV/IV and TCT measurements
title_sort study of proton and pion irradiated silicon pad detectors with cv/iv and tct measurements
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/1753846
work_keys_str_mv AT sumidahiroki studyofprotonandpionirradiatedsiliconpaddetectorswithcvivandtctmeasurements

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