Fundamentals of silicon carbide technology: growth, characterization, devices and applications

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs)...

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Detalles Bibliográficos
Autores principales: Kimoto, Tsunenobu, Cooper, James A
Lenguaje:eng
Publicado: Wiley-IEEE Press 2014
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/1953371
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author Kimoto, Tsunenobu
Cooper, James A
author_facet Kimoto, Tsunenobu
Cooper, James A
author_sort Kimoto, Tsunenobu
collection CERN
description A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.  The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls.  SiC power MOSFETs entered commercial production in 2011, providing rugged, hig
id cern-1953371
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
publisher Wiley-IEEE Press
record_format invenio
spelling cern-19533712021-04-21T20:51:47Zhttp://cds.cern.ch/record/1953371engKimoto, TsunenobuCooper, James AFundamentals of silicon carbide technology: growth, characterization, devices and applicationsEngineeringA comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.  The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls.  SiC power MOSFETs entered commercial production in 2011, providing rugged, higWiley-IEEE Pressoai:cds.cern.ch:19533712014
spellingShingle Engineering
Kimoto, Tsunenobu
Cooper, James A
Fundamentals of silicon carbide technology: growth, characterization, devices and applications
title Fundamentals of silicon carbide technology: growth, characterization, devices and applications
title_full Fundamentals of silicon carbide technology: growth, characterization, devices and applications
title_fullStr Fundamentals of silicon carbide technology: growth, characterization, devices and applications
title_full_unstemmed Fundamentals of silicon carbide technology: growth, characterization, devices and applications
title_short Fundamentals of silicon carbide technology: growth, characterization, devices and applications
title_sort fundamentals of silicon carbide technology: growth, characterization, devices and applications
topic Engineering
url http://cds.cern.ch/record/1953371
work_keys_str_mv AT kimototsunenobu fundamentalsofsiliconcarbidetechnologygrowthcharacterizationdevicesandapplications
AT cooperjamesa fundamentalsofsiliconcarbidetechnologygrowthcharacterizationdevicesandapplications

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