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Fundamentals of silicon carbide technology: growth, characterization, devices and applications
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs)...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
Wiley-IEEE Press
2014
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| Acceso en línea: | http://cds.cern.ch/record/1953371 |