Einstein relation in compound semiconductors and their nanostructures

Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semicon...

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Detalles Bibliográficos
Autores principales: Bhattacharya, Sitangshu, De, Debashis
Lenguaje:eng
Publicado: Springer 2008
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1007/978-3-540-79557-5
http://cds.cern.ch/record/1956179
Descripción
Sumario:Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.

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