Arbitrary modeling of TSVs for 3D integrated circuits

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth c...

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Detalles Bibliográficos
Autores principales: Salah, Khaled, Ismail, Yehea, El-Rouby, Alaa
Lenguaje:eng
Publicado: Springer 2014
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1007/978-3-319-07611-9
http://cds.cern.ch/record/1967939
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author Salah, Khaled
Ismail, Yehea
El-Rouby, Alaa
author_facet Salah, Khaled
Ismail, Yehea
El-Rouby, Alaa
author_sort Salah, Khaled
collection CERN
description This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor?and inductive-based
id cern-1967939
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
publisher Springer
record_format invenio
spelling cern-19679392021-04-21T20:50:50Zdoi:10.1007/978-3-319-07611-9http://cds.cern.ch/record/1967939engSalah, KhaledIsmail, YeheaEl-Rouby, AlaaArbitrary modeling of TSVs for 3D integrated circuitsEngineeringThis book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor?and inductive-basedSpringeroai:cds.cern.ch:19679392014
spellingShingle Engineering
Salah, Khaled
Ismail, Yehea
El-Rouby, Alaa
Arbitrary modeling of TSVs for 3D integrated circuits
title Arbitrary modeling of TSVs for 3D integrated circuits
title_full Arbitrary modeling of TSVs for 3D integrated circuits
title_fullStr Arbitrary modeling of TSVs for 3D integrated circuits
title_full_unstemmed Arbitrary modeling of TSVs for 3D integrated circuits
title_short Arbitrary modeling of TSVs for 3D integrated circuits
title_sort arbitrary modeling of tsvs for 3d integrated circuits
topic Engineering
url https://dx.doi.org/10.1007/978-3-319-07611-9
http://cds.cern.ch/record/1967939
work_keys_str_mv AT salahkhaled arbitrarymodelingoftsvsfor3dintegratedcircuits
AT ismailyehea arbitrarymodelingoftsvsfor3dintegratedcircuits
AT elroubyalaa arbitrarymodelingoftsvsfor3dintegratedcircuits

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