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Molecular beam epitaxy
Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design c...
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| Lenguaje: | eng |
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Elsevier Science
1980
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| Acceso en línea: | http://cds.cern.ch/record/1968063 |