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Organometallic vapor-phase epitaxy: theory and practice
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition...
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Lenguaje: | eng |
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Academic Press
1989
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Acceso en línea: | http://cds.cern.ch/record/1985514 |
_version_ | 1780945384473886720 |
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author | Stringfellow, Gerald B |
author_facet | Stringfellow, Gerald B |
author_sort | Stringfellow, Gerald B |
collection | CERN |
description | Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the |
id | cern-1985514 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1989 |
publisher | Academic Press |
record_format | invenio |
spelling | cern-19855142021-04-21T20:37:25Zhttp://cds.cern.ch/record/1985514engStringfellow, Gerald BOrganometallic vapor-phase epitaxy: theory and practiceOther Fields of PhysicsHere is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and theAcademic Pressoai:cds.cern.ch:19855141989 |
spellingShingle | Other Fields of Physics Stringfellow, Gerald B Organometallic vapor-phase epitaxy: theory and practice |
title | Organometallic vapor-phase epitaxy: theory and practice |
title_full | Organometallic vapor-phase epitaxy: theory and practice |
title_fullStr | Organometallic vapor-phase epitaxy: theory and practice |
title_full_unstemmed | Organometallic vapor-phase epitaxy: theory and practice |
title_short | Organometallic vapor-phase epitaxy: theory and practice |
title_sort | organometallic vapor-phase epitaxy: theory and practice |
topic | Other Fields of Physics |
url | http://cds.cern.ch/record/1985514 |
work_keys_str_mv | AT stringfellowgeraldb organometallicvaporphaseepitaxytheoryandpractice |