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Status and perspectives of pixel sensors based on 3D vertical integration

This paper reviews the most recent developments of 3D integration in the field of silicon pixel sensors and readout integrated circuits. This technology may address the needs of future high energy physics and photon science experiments by increasing the electronic functional density in small pixel r...

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Detalles Bibliográficos
Autor principal: Re, V
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2014
Materias:
Acceso en línea:http://cds.cern.ch/record/1992891
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author Re, V
author_facet Re, V
author_sort Re, V
collection CERN
description This paper reviews the most recent developments of 3D integration in the field of silicon pixel sensors and readout integrated circuits. This technology may address the needs of future high energy physics and photon science experiments by increasing the electronic functional density in small pixel readout cells and by stacking various device layers based on different technologies, each optimized for a different function. Current efforts are aimed at improving the performance of both hybrid pixel detectors and of CMOS sensors. The status of these activities is discussed here, taking into account experimental results on 3D devices developed in the frame of the 3D-IC consortium. The paper also provides an overview of the ideas that are being currently devised for novel 3D vertically integrated pixel sensors.
format info:eu-repo/semantics/article
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
publisher Nucl. Instrum. Methods Phys. Res., A
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spelling cern-19928912019-09-30T06:29:59Z http://cds.cern.ch/record/1992891 eng Re, V Status and perspectives of pixel sensors based on 3D vertical integration Detectors and Experimental Techniques 3: Microelectronics and interconnection technology 3.2: 3D Interconnection This paper reviews the most recent developments of 3D integration in the field of silicon pixel sensors and readout integrated circuits. This technology may address the needs of future high energy physics and photon science experiments by increasing the electronic functional density in small pixel readout cells and by stacking various device layers based on different technologies, each optimized for a different function. Current efforts are aimed at improving the performance of both hybrid pixel detectors and of CMOS sensors. The status of these activities is discussed here, taking into account experimental results on 3D devices developed in the frame of the 3D-IC consortium. The paper also provides an overview of the ideas that are being currently devised for novel 3D vertically integrated pixel sensors. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/1992891 Nucl. Instrum. Methods Phys. Res., A info:doi/10.1016/j.nima.2014.03.051 Nucl. Instrum. Methods Phys. Res., A, (2014) pp. 47-52 2014
spellingShingle Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.2: 3D Interconnection
Re, V
Status and perspectives of pixel sensors based on 3D vertical integration
title Status and perspectives of pixel sensors based on 3D vertical integration
title_full Status and perspectives of pixel sensors based on 3D vertical integration
title_fullStr Status and perspectives of pixel sensors based on 3D vertical integration
title_full_unstemmed Status and perspectives of pixel sensors based on 3D vertical integration
title_short Status and perspectives of pixel sensors based on 3D vertical integration
title_sort status and perspectives of pixel sensors based on 3d vertical integration
topic Detectors and Experimental Techniques
3: Microelectronics and interconnection technology
3.2: 3D Interconnection
url http://cds.cern.ch/record/1992891
http://cds.cern.ch/record/1992891
work_keys_str_mv AT rev statusandperspectivesofpixelsensorsbasedon3dverticalintegration