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Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology
Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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Formato: | info:eu-repo/semantics/article |
Lenguaje: | eng |
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JINST
2014
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/9/05/C05064 http://cds.cern.ch/record/1997606 |
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author | Miucci, A Gonella, L. Hemperek, T. Hügging, F. Krüger, H. Obermann, T. Wermes, N. Garcia-Sciveres, M. Backhaus, M. Capeans, M. Feigl, S. Nessi, M. Pernegger, H. Ristic, B. Gonzalez-Sevilla, S. Ferrere, D. Iacobucci, G. Rosa, A.La Muenstermann, D. George, M. Grosse-Knetter, J. Quadt, A. Rieger, J. Weingarten, J. Bates, R. Blue, A. Buttar, C. Hynds, D. Kreidl, C. Peric, I. Breugnon, P. Pangaud, P. Godiot-Basolo, S. Fougeron, D. Bompard, F. Clemens, J.C. Liu, J Barbero, M. Rozanov, A |
author_facet | Miucci, A Gonella, L. Hemperek, T. Hügging, F. Krüger, H. Obermann, T. Wermes, N. Garcia-Sciveres, M. Backhaus, M. Capeans, M. Feigl, S. Nessi, M. Pernegger, H. Ristic, B. Gonzalez-Sevilla, S. Ferrere, D. Iacobucci, G. Rosa, A.La Muenstermann, D. George, M. Grosse-Knetter, J. Quadt, A. Rieger, J. Weingarten, J. Bates, R. Blue, A. Buttar, C. Hynds, D. Kreidl, C. Peric, I. Breugnon, P. Pangaud, P. Godiot-Basolo, S. Fougeron, D. Bompard, F. Clemens, J.C. Liu, J Barbero, M. Rozanov, A |
author_sort | Miucci, A |
collection | CERN |
description | Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown. |
format | info:eu-repo/semantics/article |
id | cern-1997606 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2014 |
publisher | JINST |
record_format | invenio |
spelling | cern-19976062019-09-30T06:29:59Z doi:10.1088/1748-0221/9/05/C05064 http://cds.cern.ch/record/1997606 eng Miucci, A Gonella, L. Hemperek, T. Hügging, F. Krüger, H. Obermann, T. Wermes, N. Garcia-Sciveres, M. Backhaus, M. Capeans, M. Feigl, S. Nessi, M. Pernegger, H. Ristic, B. Gonzalez-Sevilla, S. Ferrere, D. Iacobucci, G. Rosa, A.La Muenstermann, D. George, M. Grosse-Knetter, J. Quadt, A. Rieger, J. Weingarten, J. Bates, R. Blue, A. Buttar, C. Hynds, D. Kreidl, C. Peric, I. Breugnon, P. Pangaud, P. Godiot-Basolo, S. Fougeron, D. Bompard, F. Clemens, J.C. Liu, J Barbero, M. Rozanov, A Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology Detectors and Experimental Techniques 9: Advanced infrastructures for detector R&D 9.3: Precision Pixel Detectors Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/1997606 JINST JINST, (2014) pp. C05064 2014 |
spellingShingle | Detectors and Experimental Techniques 9: Advanced infrastructures for detector R&D 9.3: Precision Pixel Detectors Miucci, A Gonella, L. Hemperek, T. Hügging, F. Krüger, H. Obermann, T. Wermes, N. Garcia-Sciveres, M. Backhaus, M. Capeans, M. Feigl, S. Nessi, M. Pernegger, H. Ristic, B. Gonzalez-Sevilla, S. Ferrere, D. Iacobucci, G. Rosa, A.La Muenstermann, D. George, M. Grosse-Knetter, J. Quadt, A. Rieger, J. Weingarten, J. Bates, R. Blue, A. Buttar, C. Hynds, D. Kreidl, C. Peric, I. Breugnon, P. Pangaud, P. Godiot-Basolo, S. Fougeron, D. Bompard, F. Clemens, J.C. Liu, J Barbero, M. Rozanov, A Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology |
title | Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology |
title_full | Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology |
title_fullStr | Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology |
title_full_unstemmed | Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology |
title_short | Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology |
title_sort | radiation-hard active pixel sensors for hl-lhc detector upgrades based on hv-cmos technology |
topic | Detectors and Experimental Techniques 9: Advanced infrastructures for detector R&D 9.3: Precision Pixel Detectors |
url | https://dx.doi.org/10.1088/1748-0221/9/05/C05064 http://cds.cern.ch/record/1997606 http://cds.cern.ch/record/1997606 |
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