Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Mostrar otras versiones (1)

In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this...

Descripción completa

Detalles Bibliográficos
Autores principales: Calderini, G., Bagolini, A., Bomben, M., Boscardin, M., Bosisio, L., Chauveau, J., Giacomini, G., La Rosa, A., Marchiori, G., Zorzi, N.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2013
Materias:
Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
physics.ins-det
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2014.05.009
http://cds.cern.ch/record/1999228
Mostrar todas las versiones(2)

Ejemplares similares