Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this opti...

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Detalles Bibliográficos
Autores principales: Giacomini, Gabriele, Bagolini, Alvise, Bomben, Marco, Boscardin, Maurizio, Bosisio, Luciano, Calderini, Giovanni, Chauveau, Jacques, La Rosa, Alessandro, Marchiori, Giovanni, Zorzi, Nicola
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: JINST 2014
Materias:
Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/9/01/C01063
http://cds.cern.ch/record/1999244

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