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Radiation resistance of double-type double-sided 3D pixel sensors

The proposed high-luminosity upgrade of the Large Hadron Collider is expected to increase the instantaneous luminosity at the experiments' interaction points by a factor of ten. The vertex detector will be the subsystem most affected by the luminosity increase, raising substantially their occup...

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Autores principales: Fernandez, M, Jaramillo, R, Lozano, M, Munoz, F.J, Pellegrini, G, Quirion, D, Rohe, T, Vila, I
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2013
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2013.05.121
http://cds.cern.ch/record/2002661
_version_ 1780946066014732288
author Fernandez, M
Jaramillo, R
Lozano, M
Munoz, F.J
Pellegrini, G
Quirion, D
Rohe, T
Vila, I
author_facet Fernandez, M
Jaramillo, R
Lozano, M
Munoz, F.J
Pellegrini, G
Quirion, D
Rohe, T
Vila, I
author_sort Fernandez, M
collection CERN
description The proposed high-luminosity upgrade of the Large Hadron Collider is expected to increase the instantaneous luminosity at the experiments' interaction points by a factor of ten. The vertex detector will be the subsystem most affected by the luminosity increase, raising substantially their occupancy and radiation-induced damage. To preserve the vertex physics performance under these new conditions, current pixel technologies have to be improved. Hybrid pixel sensors with double-sided double-type vertical electrodes (3D sensors) are becoming a mature technology for the detector layers closest to the interaction point due to their intrinsic radiation hardness. In addition, the double-sided implementation of the 3D pixel technology provides some additional technical advantages with respect to the single-sided implementation. For this study, 3D pixel sensors manufactured at the Centro Nacional de Microelectrónica of Barcelona (IMB-CNM) have been bonded to the PSI46 readout chip currently used by the Compact Muon Solenoid vertex detector. Detector performance before and after irradiation up to fluences of 5x10^15 neq/cm^2 is presented.
format info:eu-repo/semantics/article
id cern-2002661
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2013
publisher Nucl. Instrum. Methods Phys. Res., A
record_format invenio
spelling cern-20026612019-09-30T06:29:59Z doi:10.1016/j.nima.2013.05.121 http://cds.cern.ch/record/2002661 eng Fernandez, M Jaramillo, R Lozano, M Munoz, F.J Pellegrini, G Quirion, D Rohe, T Vila, I Radiation resistance of double-type double-sided 3D pixel sensors Detectors and Experimental Techniques 9: Advanced infrastructures for detector R&D 9.3: Precision Pixel Detectors The proposed high-luminosity upgrade of the Large Hadron Collider is expected to increase the instantaneous luminosity at the experiments' interaction points by a factor of ten. The vertex detector will be the subsystem most affected by the luminosity increase, raising substantially their occupancy and radiation-induced damage. To preserve the vertex physics performance under these new conditions, current pixel technologies have to be improved. Hybrid pixel sensors with double-sided double-type vertical electrodes (3D sensors) are becoming a mature technology for the detector layers closest to the interaction point due to their intrinsic radiation hardness. In addition, the double-sided implementation of the 3D pixel technology provides some additional technical advantages with respect to the single-sided implementation. For this study, 3D pixel sensors manufactured at the Centro Nacional de Microelectrónica of Barcelona (IMB-CNM) have been bonded to the PSI46 readout chip currently used by the Compact Muon Solenoid vertex detector. Detector performance before and after irradiation up to fluences of 5x10^15 neq/cm^2 is presented. info:eu-repo/grantAgreement/EC/FP7/262025 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2002661 Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A, (2013) pp. 137-140 2013
spellingShingle Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
Fernandez, M
Jaramillo, R
Lozano, M
Munoz, F.J
Pellegrini, G
Quirion, D
Rohe, T
Vila, I
Radiation resistance of double-type double-sided 3D pixel sensors
title Radiation resistance of double-type double-sided 3D pixel sensors
title_full Radiation resistance of double-type double-sided 3D pixel sensors
title_fullStr Radiation resistance of double-type double-sided 3D pixel sensors
title_full_unstemmed Radiation resistance of double-type double-sided 3D pixel sensors
title_short Radiation resistance of double-type double-sided 3D pixel sensors
title_sort radiation resistance of double-type double-sided 3d pixel sensors
topic Detectors and Experimental Techniques
9: Advanced infrastructures for detector R&D
9.3: Precision Pixel Detectors
url https://dx.doi.org/10.1016/j.nima.2013.05.121
http://cds.cern.ch/record/2002661
http://cds.cern.ch/record/2002661
work_keys_str_mv AT fernandezm radiationresistanceofdoubletypedoublesided3dpixelsensors
AT jaramillor radiationresistanceofdoubletypedoublesided3dpixelsensors
AT lozanom radiationresistanceofdoubletypedoublesided3dpixelsensors
AT munozfj radiationresistanceofdoubletypedoublesided3dpixelsensors
AT pellegrinig radiationresistanceofdoubletypedoublesided3dpixelsensors
AT quiriond radiationresistanceofdoubletypedoublesided3dpixelsensors
AT rohet radiationresistanceofdoubletypedoublesided3dpixelsensors
AT vilai radiationresistanceofdoubletypedoublesided3dpixelsensors