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Second International Conference on Neutron Transmutation Doping in Semiconductors

This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organize...

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Detalles Bibliográficos
Autor principal: Meese, Jon
Lenguaje:eng
Publicado: Springer 1979
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-1-4684-8249-2
http://cds.cern.ch/record/2006428
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author Meese, Jon
author_facet Meese, Jon
author_sort Meese, Jon
collection CERN
description This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con­ ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna­ tional in scope.
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institution Organización Europea para la Investigación Nuclear
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spelling cern-20064282021-04-22T06:57:23Zdoi:10.1007/978-1-4684-8249-2http://cds.cern.ch/record/2006428engMeese, JonSecond International Conference on Neutron Transmutation Doping in SemiconductorsOther Fields of PhysicsThis volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con­ ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna­ tional in scope.Springeroai:cds.cern.ch:20064281979
spellingShingle Other Fields of Physics
Meese, Jon
Second International Conference on Neutron Transmutation Doping in Semiconductors
title Second International Conference on Neutron Transmutation Doping in Semiconductors
title_full Second International Conference on Neutron Transmutation Doping in Semiconductors
title_fullStr Second International Conference on Neutron Transmutation Doping in Semiconductors
title_full_unstemmed Second International Conference on Neutron Transmutation Doping in Semiconductors
title_short Second International Conference on Neutron Transmutation Doping in Semiconductors
title_sort second international conference on neutron transmutation doping in semiconductors
topic Other Fields of Physics
url https://dx.doi.org/10.1007/978-1-4684-8249-2
http://cds.cern.ch/record/2006428
work_keys_str_mv AT meesejon secondinternationalconferenceonneutrontransmutationdopinginsemiconductors