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Optical characterization of epitaxial semiconductor layers

The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on...

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Detalles Bibliográficos
Autores principales: Bauer, Günther, Richter, Wolfgang
Lenguaje:eng
Publicado: Springer 1996
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-642-79678-4
http://cds.cern.ch/record/2006468
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author Bauer, Günther
Richter, Wolfgang
author_facet Bauer, Günther
Richter, Wolfgang
author_sort Bauer, Günther
collection CERN
description The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of semiconductor layers and for those entering this field. It summarizes the present-day knowledge and reviews the latest developments important for future ex-situ and in-situ studies.
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spelling cern-20064682021-04-21T20:22:22Zdoi:10.1007/978-3-642-79678-4http://cds.cern.ch/record/2006468engBauer, GüntherRichter, WolfgangOptical characterization of epitaxial semiconductor layersOther Fields of PhysicsThe last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of semiconductor layers and for those entering this field. It summarizes the present-day knowledge and reviews the latest developments important for future ex-situ and in-situ studies.Springeroai:cds.cern.ch:20064681996
spellingShingle Other Fields of Physics
Bauer, Günther
Richter, Wolfgang
Optical characterization of epitaxial semiconductor layers
title Optical characterization of epitaxial semiconductor layers
title_full Optical characterization of epitaxial semiconductor layers
title_fullStr Optical characterization of epitaxial semiconductor layers
title_full_unstemmed Optical characterization of epitaxial semiconductor layers
title_short Optical characterization of epitaxial semiconductor layers
title_sort optical characterization of epitaxial semiconductor layers
topic Other Fields of Physics
url https://dx.doi.org/10.1007/978-3-642-79678-4
http://cds.cern.ch/record/2006468
work_keys_str_mv AT bauergunther opticalcharacterizationofepitaxialsemiconductorlayers
AT richterwolfgang opticalcharacterizationofepitaxialsemiconductorlayers