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Optical characterization of epitaxial semiconductor layers
The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on...
| Autores principales: | , |
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| Lenguaje: | eng |
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Springer
1996
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| Acceso en línea: | https://dx.doi.org/10.1007/978-3-642-79678-4 http://cds.cern.ch/record/2006468 |