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Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II
Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitoring systems at the Large Hadron Collider, FLASH or XFEL. Artificial diamond sensors are currently widely used as sensors in these syste...
Autores principales: | , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2015
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/10/08/P08008 http://cds.cern.ch/record/2010379 |
_version_ | 1780946498049015808 |
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author | Karacheban, O Afanaciev, K Hempel, M Henschel, H Lange, W Leonard, J L Levy, I Lohmann, W Schuwalow, S |
author_facet | Karacheban, O Afanaciev, K Hempel, M Henschel, H Lange, W Leonard, J L Levy, I Lohmann, W Schuwalow, S |
author_sort | Karacheban, O |
collection | CERN |
description | Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitoring systems at the Large Hadron Collider, FLASH or XFEL. Artificial diamond sensors are currently widely used as sensors in these systems. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm^2 size and 525 micrometer thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the detector was studied in a 5 GeV electron beam. The charge collection efficiency of the sensors was measured as a function of the bias voltage. It rises with the voltage, reaching about 10 % at 950 V. The signal size obtained from an electron crossing the stack at this voltage is about 22000 e, where e is the unit charge. Using the EUDET beam telescope, beam electrons trajectories where reconstructed, allowing to determine the position of the hits on the detector. The signal size is measured as a function of the hit position, showing variations of up to 20 % in the direction perpendicular to the beam and to the electric field. The measurement of the signal size as a function of the coordinate parallel to the electric field confirms the prediction that mainly electrons contribute to the signal. Also evidence for the presence of a polarization field was observed. |
id | cern-2010379 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2015 |
record_format | invenio |
spelling | cern-20103792021-05-03T20:13:55Zdoi:10.1088/1748-0221/10/08/P08008http://cds.cern.ch/record/2010379engKaracheban, OAfanaciev, KHempel, MHenschel, HLange, WLeonard, J LLevy, ILohmann, WSchuwalow, SInvestigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-IIDetectors and Experimental TechniquesExtremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitoring systems at the Large Hadron Collider, FLASH or XFEL. Artificial diamond sensors are currently widely used as sensors in these systems. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm^2 size and 525 micrometer thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the detector was studied in a 5 GeV electron beam. The charge collection efficiency of the sensors was measured as a function of the bias voltage. It rises with the voltage, reaching about 10 % at 950 V. The signal size obtained from an electron crossing the stack at this voltage is about 22000 e, where e is the unit charge. Using the EUDET beam telescope, beam electrons trajectories where reconstructed, allowing to determine the position of the hits on the detector. The signal size is measured as a function of the hit position, showing variations of up to 20 % in the direction perpendicular to the beam and to the electric field. The measurement of the signal size as a function of the coordinate parallel to the electric field confirms the prediction that mainly electrons contribute to the signal. Also evidence for the presence of a polarization field was observed.arXiv:1504.04023oai:cds.cern.ch:20103792015-04-15 |
spellingShingle | Detectors and Experimental Techniques Karacheban, O Afanaciev, K Hempel, M Henschel, H Lange, W Leonard, J L Levy, I Lohmann, W Schuwalow, S Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II |
title | Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II |
title_full | Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II |
title_fullStr | Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II |
title_full_unstemmed | Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II |
title_short | Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II |
title_sort | investigation of a direction sensitive sapphire detector stack at the 5 gev electron beam at desy-ii |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1088/1748-0221/10/08/P08008 http://cds.cern.ch/record/2010379 |
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