Cargando…
On the mathematical modeling of memristor, memcapacitor, and meminductor
This book introduces the basic fundamentals, models, emulators and analyses of mem-elements in the circuit theory with applications. The book starts reviewing the literature on mem-elements, models and their recent applications. It presents mathematical models, numerical results, circuit simulations...
Autores principales: | , |
---|---|
Lenguaje: | eng |
Publicado: |
Springer
2015
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-3-319-17491-4 http://cds.cern.ch/record/2020991 |
_version_ | 1780946874930298880 |
---|---|
author | Radwan, Ahmed G Fouda, Mohammed E |
author_facet | Radwan, Ahmed G Fouda, Mohammed E |
author_sort | Radwan, Ahmed G |
collection | CERN |
description | This book introduces the basic fundamentals, models, emulators and analyses of mem-elements in the circuit theory with applications. The book starts reviewing the literature on mem-elements, models and their recent applications. It presents mathematical models, numerical results, circuit simulations, and experimental results for double-loop hysteresis behavior of mem-elements. The authors introduce a generalized memristor model in the fractional-order domain under different input and different designs for emulator-based mem-elements, with circuit and experimental results. The basic concept of memristive-based relaxation-oscillators in the circuit theory is also covered. The reader will moreover find in this book information on memristor-based multi-level digital circuits, memristor-based multi-level multiplier and memcapacitor-based oscillators and synaptic circuits. |
id | cern-2020991 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2015 |
publisher | Springer |
record_format | invenio |
spelling | cern-20209912021-04-21T20:16:51Zdoi:10.1007/978-3-319-17491-4http://cds.cern.ch/record/2020991engRadwan, Ahmed GFouda, Mohammed EOn the mathematical modeling of memristor, memcapacitor, and meminductorEngineeringThis book introduces the basic fundamentals, models, emulators and analyses of mem-elements in the circuit theory with applications. The book starts reviewing the literature on mem-elements, models and their recent applications. It presents mathematical models, numerical results, circuit simulations, and experimental results for double-loop hysteresis behavior of mem-elements. The authors introduce a generalized memristor model in the fractional-order domain under different input and different designs for emulator-based mem-elements, with circuit and experimental results. The basic concept of memristive-based relaxation-oscillators in the circuit theory is also covered. The reader will moreover find in this book information on memristor-based multi-level digital circuits, memristor-based multi-level multiplier and memcapacitor-based oscillators and synaptic circuits.Springeroai:cds.cern.ch:20209912015 |
spellingShingle | Engineering Radwan, Ahmed G Fouda, Mohammed E On the mathematical modeling of memristor, memcapacitor, and meminductor |
title | On the mathematical modeling of memristor, memcapacitor, and meminductor |
title_full | On the mathematical modeling of memristor, memcapacitor, and meminductor |
title_fullStr | On the mathematical modeling of memristor, memcapacitor, and meminductor |
title_full_unstemmed | On the mathematical modeling of memristor, memcapacitor, and meminductor |
title_short | On the mathematical modeling of memristor, memcapacitor, and meminductor |
title_sort | on the mathematical modeling of memristor, memcapacitor, and meminductor |
topic | Engineering |
url | https://dx.doi.org/10.1007/978-3-319-17491-4 http://cds.cern.ch/record/2020991 |
work_keys_str_mv | AT radwanahmedg onthemathematicalmodelingofmemristormemcapacitorandmeminductor AT foudamohammede onthemathematicalmodelingofmemristormemcapacitorandmeminductor |