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Poly-SiGe for MEMS-above-CMOS sensors
Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead...
| Autores principales: | , , |
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| Lenguaje: | eng |
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Springer
2014
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1007/978-94-007-6799-7 http://cds.cern.ch/record/2023510 |