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Impact of low-dose electron irradiation on $n^+p$ silicon strip sensors
The response of $n^+p$ silicon strip sensors to electrons from a $^{90}$Sr source was measured using a multi-channel read-out system with 25\,ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabrica...
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Lenguaje: | eng |
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2014
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Acceso en línea: | http://cds.cern.ch/record/2026427 |