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Metal semiconductor contacts and devices
VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization t...
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Lenguaje: | eng |
Publicado: |
Academic Press
1986
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Acceso en línea: | http://cds.cern.ch/record/2031823 |
_version_ | 1780947483286831104 |
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author | Cohen, Simon S Gildenblat, Gennady Sh Einspruch, Norman G |
author_facet | Cohen, Simon S Gildenblat, Gennady Sh Einspruch, Norman G |
author_sort | Cohen, Simon S |
collection | CERN |
description | VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl |
id | cern-2031823 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1986 |
publisher | Academic Press |
record_format | invenio |
spelling | cern-20318232021-04-21T20:10:46Zhttp://cds.cern.ch/record/2031823engCohen, Simon SGildenblat, Gennady ShEinspruch, Norman GMetal semiconductor contacts and devicesEngineeringVLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularlAcademic Pressoai:cds.cern.ch:20318231986 |
spellingShingle | Engineering Cohen, Simon S Gildenblat, Gennady Sh Einspruch, Norman G Metal semiconductor contacts and devices |
title | Metal semiconductor contacts and devices |
title_full | Metal semiconductor contacts and devices |
title_fullStr | Metal semiconductor contacts and devices |
title_full_unstemmed | Metal semiconductor contacts and devices |
title_short | Metal semiconductor contacts and devices |
title_sort | metal semiconductor contacts and devices |
topic | Engineering |
url | http://cds.cern.ch/record/2031823 |
work_keys_str_mv | AT cohensimons metalsemiconductorcontactsanddevices AT gildenblatgennadysh metalsemiconductorcontactsanddevices AT einspruchnormang metalsemiconductorcontactsanddevices |