HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup

Silicon detectors are exposed to very high fluences (in excess of 1E16 particles*cm-2) in experiments like ATLAS and CMS, so it is paramount that their behavior is understood even after irradiation. To that end, irradiated prototype HVCMOS detectors were characterized using eTCT and IV curves. It was found that acceptor removal via irradiation increased the size of the charge collection region. At sufficient fluences, trap introduction became the dominant effect, and the charge collection region shrinks again.