HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup

Silicon detectors are exposed to very high fluences (in excess of 1E16 particles*cm-2) in experiments like ATLAS and CMS, so it is paramount that their behavior is understood even after irradiation. To that end, irradiated prototype HVCMOS detectors were characterized using eTCT and IV curves. It wa...

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Detalles Bibliográficos
Autor principal: Laroche, Stewart
Lenguaje:eng
Publicado: 2015
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/2045826
_version_ 1780947917246300160
author Laroche, Stewart
author_facet Laroche, Stewart
author_sort Laroche, Stewart
collection CERN
description Silicon detectors are exposed to very high fluences (in excess of 1E16 particles*cm-2) in experiments like ATLAS and CMS, so it is paramount that their behavior is understood even after irradiation. To that end, irradiated prototype HVCMOS detectors were characterized using eTCT and IV curves. It was found that acceptor removal via irradiation increased the size of the charge collection region. At sufficient fluences, trap introduction became the dominant effect, and the charge collection region shrinks again.
id cern-2045826
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling cern-20458262019-09-30T06:29:59Zhttp://cds.cern.ch/record/2045826engLaroche, StewartHVCMOS 35v1 Detector Characterization Using an IR eTCT SetupDetectors and Experimental TechniquesSilicon detectors are exposed to very high fluences (in excess of 1E16 particles*cm-2) in experiments like ATLAS and CMS, so it is paramount that their behavior is understood even after irradiation. To that end, irradiated prototype HVCMOS detectors were characterized using eTCT and IV curves. It was found that acceptor removal via irradiation increased the size of the charge collection region. At sufficient fluences, trap introduction became the dominant effect, and the charge collection region shrinks again.CERN-STUDENTS-Note-2015-074oai:cds.cern.ch:20458262015-08-14
spellingShingle Detectors and Experimental Techniques
Laroche, Stewart
HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup
title HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup
title_full HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup
title_fullStr HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup
title_full_unstemmed HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup
title_short HVCMOS 35v1 Detector Characterization Using an IR eTCT Setup
title_sort hvcmos 35v1 detector characterization using an ir etct setup
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/2045826
work_keys_str_mv AT larochestewart hvcmos35v1detectorcharacterizationusinganiretctsetup

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