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Applied solid state science: advances in materials and device research 3

Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the appl...

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Detalles Bibliográficos
Autor principal: Wolfe, Raymond
Lenguaje:eng
Publicado: Elsevier Science 2013
Materias:
Acceso en línea:http://cds.cern.ch/record/2050106
Descripción
Sumario:Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the application of the transient charge technique in drift velocity; and trapping in semiconductors and in materials used in xerography, nuclear particle detectors, and space-charge-limited devices; as well as thin film transistors. The text describes the manipulation of laser beams in solids and discusses