Applied solid state science: advances in materials and device research 3

Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the appl...

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Detalles Bibliográficos
Autor principal: Wolfe, Raymond
Lenguaje:eng
Publicado: Elsevier Science 2013
Materias:
General Theoretical Physics
Acceso en línea:http://cds.cern.ch/record/2050106
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author Wolfe, Raymond
author_facet Wolfe, Raymond
author_sort Wolfe, Raymond
collection CERN
description Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the application of the transient charge technique in drift velocity; and trapping in semiconductors and in materials used in xerography, nuclear particle detectors, and space-charge-limited devices; as well as thin film transistors. The text describes the manipulation of laser beams in solids and discusses
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institution Organización Europea para la Investigación Nuclear
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publishDate 2013
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spelling cern-20501062021-04-21T20:06:28Zhttp://cds.cern.ch/record/2050106engWolfe, RaymondApplied solid state science: advances in materials and device research 3General Theoretical PhysicsApplied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the application of the transient charge technique in drift velocity; and trapping in semiconductors and in materials used in xerography, nuclear particle detectors, and space-charge-limited devices; as well as thin film transistors. The text describes the manipulation of laser beams in solids and discusses Elsevier Scienceoai:cds.cern.ch:20501062013
spellingShingle General Theoretical Physics
Wolfe, Raymond
Applied solid state science: advances in materials and device research 3
title Applied solid state science: advances in materials and device research 3
title_full Applied solid state science: advances in materials and device research 3
title_fullStr Applied solid state science: advances in materials and device research 3
title_full_unstemmed Applied solid state science: advances in materials and device research 3
title_short Applied solid state science: advances in materials and device research 3
title_sort applied solid state science: advances in materials and device research 3
topic General Theoretical Physics
url http://cds.cern.ch/record/2050106
work_keys_str_mv AT wolferaymond appliedsolidstatescienceadvancesinmaterialsanddeviceresearch3

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