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Photoluminescence studies of ZnO doped with stable and radioactive impurities
In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radioactive isotopes, in order to investigate the chemical nature of exciton re-combinations bound to previously unidentified defects. Photo-luminescence (PL) is discussed and is used extensively as the p...
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| Lenguaje: | eng |
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2015
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| Acceso en línea: | http://cds.cern.ch/record/2063477 |