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Technology computer aided design for Si, SiGe and GaAs integrated circuits

The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors...

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Detalles Bibliográficos
Autores principales: Armstrong, GA, Maiti, CK
Lenguaje:eng
Publicado: The Institution of Engineering and Technology 2007
Materias:
Acceso en línea:http://cds.cern.ch/record/2066426
Descripción
Sumario:The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-