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Technology computer aided design for Si, SiGe and GaAs integrated circuits
The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors...
Autores principales: | , |
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Lenguaje: | eng |
Publicado: |
The Institution of Engineering and Technology
2007
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2066426 |
Sumario: | The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and- |
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