Technology computer aided design for Si, SiGe and GaAs integrated circuits

The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors...

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Detalles Bibliográficos
Autores principales: Armstrong, GA, Maiti, CK
Lenguaje:eng
Publicado: The Institution of Engineering and Technology 2007
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/2066426
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author Armstrong, GA
Maiti, CK
author_facet Armstrong, GA
Maiti, CK
author_sort Armstrong, GA
collection CERN
description The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-
id cern-2066426
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2007
publisher The Institution of Engineering and Technology
record_format invenio
spelling cern-20664262021-04-21T20:02:57Zhttp://cds.cern.ch/record/2066426engArmstrong, GAMaiti, CKTechnology computer aided design for Si, SiGe and GaAs integrated circuitsEngineeringThe first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-The Institution of Engineering and Technologyoai:cds.cern.ch:20664262007
spellingShingle Engineering
Armstrong, GA
Maiti, CK
Technology computer aided design for Si, SiGe and GaAs integrated circuits
title Technology computer aided design for Si, SiGe and GaAs integrated circuits
title_full Technology computer aided design for Si, SiGe and GaAs integrated circuits
title_fullStr Technology computer aided design for Si, SiGe and GaAs integrated circuits
title_full_unstemmed Technology computer aided design for Si, SiGe and GaAs integrated circuits
title_short Technology computer aided design for Si, SiGe and GaAs integrated circuits
title_sort technology computer aided design for si, sige and gaas integrated circuits
topic Engineering
url http://cds.cern.ch/record/2066426
work_keys_str_mv AT armstrongga technologycomputeraideddesignforsisigeandgaasintegratedcircuits
AT maitick technologycomputeraideddesignforsisigeandgaasintegratedcircuits

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