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Lattice location of ion-implanted radioactive dopants in compound semiconductors

Detalles Bibliográficos
Autores principales:	Winter, S, Blässer, S, Hofsäss, H C, Jahn, S, Lindner, G, Wahl, U, Recknagel, E
Lenguaje:	eng
Publicado:	1990
Materias:	Other Fields of Physics
Acceso en línea:	http://cds.cern.ch/record/207514

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