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Investigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada
This study aimed the use of nuclear technique Perturbed γ-γ Angular Correlation Spectroccopy (PAC) to measure the hyperfine interactions in thin films and powder samples of SnO2 and TiO2 pure and doped with transition metals to obtain a systematic investigation of defects and magnetism from an atomi...
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Lenguaje: | por |
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2015
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Acceso en línea: | http://cds.cern.ch/record/2110251 |
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author | Schell, Juliana |
author_facet | Schell, Juliana |
author_sort | Schell, Juliana |
collection | CERN |
description | This study aimed the use of nuclear technique Perturbed γ-γ Angular Correlation Spectroccopy (PAC) to measure the hyperfine interactions in thin films and powder samples of SnO2 and TiO2 pure and doped with transition metals to obtain a systematic investigation of defects and magnetism from an atomic point of view with the main motivation the application in spintronics. The work also focused on the preparation and characterization of samples by conventional techniques such as X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and magnetization measurements. Pure samples of the films were measured by the systematic variation of thermal treatment and applied magnetic field. These measurements were performed in HISKP at the University of Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn) using 111In(111Cd) or 181Hf (181Ta); at IPEN, in turn, these measurements were performed after the diffusion of the same probe nuclei. Another part of PAC measurements were carried out using 111mCd(111Cd) and 117Cd (117In) in Isotope Mass Separator On-Line (ISOLDE) at Centre Européen Recherche Nucléaire (CERN). The measurements were performed from 8 K to 1173 K. After comparing results from macroscopic techniques with those from PAC, it was concluded that there is a correlation between the defects, magnetism and the mobility of charge carriers in semiconductors studied here. A step forward in the search for semiconductors, whose magnetic ordering allows its use in electronics based on spin. Some results have been published, including results obtained at the University of Bonn for the sandwich doctorate period [1-7]. |
id | cern-2110251 |
institution | Organización Europea para la Investigación Nuclear |
language | por |
publishDate | 2015 |
record_format | invenio |
spelling | cern-21102512019-09-30T06:29:59Zhttp://cds.cern.ch/record/2110251porSchell, JulianaInvestigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbadaCondensed MatterThis study aimed the use of nuclear technique Perturbed γ-γ Angular Correlation Spectroccopy (PAC) to measure the hyperfine interactions in thin films and powder samples of SnO2 and TiO2 pure and doped with transition metals to obtain a systematic investigation of defects and magnetism from an atomic point of view with the main motivation the application in spintronics. The work also focused on the preparation and characterization of samples by conventional techniques such as X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and magnetization measurements. Pure samples of the films were measured by the systematic variation of thermal treatment and applied magnetic field. These measurements were performed in HISKP at the University of Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn) using 111In(111Cd) or 181Hf (181Ta); at IPEN, in turn, these measurements were performed after the diffusion of the same probe nuclei. Another part of PAC measurements were carried out using 111mCd(111Cd) and 117Cd (117In) in Isotope Mass Separator On-Line (ISOLDE) at Centre Européen Recherche Nucléaire (CERN). The measurements were performed from 8 K to 1173 K. After comparing results from macroscopic techniques with those from PAC, it was concluded that there is a correlation between the defects, magnetism and the mobility of charge carriers in semiconductors studied here. A step forward in the search for semiconductors, whose magnetic ordering allows its use in electronics based on spin. Some results have been published, including results obtained at the University of Bonn for the sandwich doctorate period [1-7].CERN-THESIS-2015-229oai:cds.cern.ch:21102512015-12-03T08:49:05Z |
spellingShingle | Condensed Matter Schell, Juliana Investigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada |
title | Investigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada |
title_full | Investigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada |
title_fullStr | Investigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada |
title_full_unstemmed | Investigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada |
title_short | Investigação de parâmetros hiperfinos dos óxidos semicondutores $SnO_{2}$ e $TiO_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada |
title_sort | investigação de parâmetros hiperfinos dos óxidos semicondutores $sno_{2}$ e $tio_{2}$ puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada |
topic | Condensed Matter |
url | http://cds.cern.ch/record/2110251 |
work_keys_str_mv | AT schelljuliana investigacaodeparametroshiperfinosdosoxidossemicondutoressno2etio2purosedopadoscommetaisdetransicao3dpelaespectroscopiadecorrelacaoangulargamagamaperturbada |