Advances in research and development: modeling of film deposition for microelectronic applications

Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector s...

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Detalles Bibliográficos
Autores principales: Francombe, Maurice H, Vossen, John L
Lenguaje:eng
Publicado: Elsevier Science 1997
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/2116502
Descripción
Sumario:Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

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