Advances in research and development: modeling of film deposition for microelectronic applications

Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector s...

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Detalles Bibliográficos
Autores principales: Francombe, Maurice H, Vossen, John L
Lenguaje:eng
Publicado: Elsevier Science 1997
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/2116502
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author Francombe, Maurice H
Vossen, John L
author_facet Francombe, Maurice H
Vossen, John L
author_sort Francombe, Maurice H
collection CERN
description Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
id cern-2116502
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1997
publisher Elsevier Science
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spelling cern-21165022021-04-21T19:56:41Zhttp://cds.cern.ch/record/2116502engFrancombe, Maurice HVossen, John LAdvances in research and development: modeling of film deposition for microelectronic applicationsEngineeringSignificant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.Elsevier Scienceoai:cds.cern.ch:21165021997
spellingShingle Engineering
Francombe, Maurice H
Vossen, John L
Advances in research and development: modeling of film deposition for microelectronic applications
title Advances in research and development: modeling of film deposition for microelectronic applications
title_full Advances in research and development: modeling of film deposition for microelectronic applications
title_fullStr Advances in research and development: modeling of film deposition for microelectronic applications
title_full_unstemmed Advances in research and development: modeling of film deposition for microelectronic applications
title_short Advances in research and development: modeling of film deposition for microelectronic applications
title_sort advances in research and development: modeling of film deposition for microelectronic applications
topic Engineering
url http://cds.cern.ch/record/2116502
work_keys_str_mv AT francombemauriceh advancesinresearchanddevelopmentmodelingoffilmdepositionformicroelectronicapplications
AT vossenjohnl advancesinresearchanddevelopmentmodelingoffilmdepositionformicroelectronicapplications

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