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Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme...
| Autores principales: | , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/11/02/C02045 http://cds.cern.ch/record/2119054 |
| _version_ | 1780949258726277120 |
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| author | Rymaszewski, Piotr Barbero, Marlon Breugnon, Patrick Godiot, Stépahnie Gonella, Laura Hemperek, Tomasz Hirono, Toko Hügging, Fabian Krüger, Hans Liu, Jian Pangaud, Patrick Peric, Ivan Rozanov, Alexandre Wang, Anqing Wermes, Norbert |
| author_facet | Rymaszewski, Piotr Barbero, Marlon Breugnon, Patrick Godiot, Stépahnie Gonella, Laura Hemperek, Tomasz Hirono, Toko Hügging, Fabian Krüger, Hans Liu, Jian Pangaud, Patrick Peric, Ivan Rozanov, Alexandre Wang, Anqing Wermes, Norbert |
| author_sort | Rymaszewski, Piotr |
| collection | CERN |
| description | The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results. |
| id | cern-2119054 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2016 |
| record_format | invenio |
| spelling | cern-21190542021-11-09T07:06:19Zdoi:10.1088/1748-0221/11/02/C02045http://cds.cern.ch/record/2119054engRymaszewski, PiotrBarbero, MarlonBreugnon, PatrickGodiot, StépahnieGonella, LauraHemperek, TomaszHirono, TokoHügging, FabianKrüger, HansLiu, JianPangaud, PatrickPeric, IvanRozanov, AlexandreWang, AnqingWermes, NorbertPrototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector UpgradeDetectors and Experimental TechniquesThe LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R{&}D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.arXiv:1601.00459oai:cds.cern.ch:21190542016-01-04 |
| spellingShingle | Detectors and Experimental Techniques Rymaszewski, Piotr Barbero, Marlon Breugnon, Patrick Godiot, Stépahnie Gonella, Laura Hemperek, Tomasz Hirono, Toko Hügging, Fabian Krüger, Hans Liu, Jian Pangaud, Patrick Peric, Ivan Rozanov, Alexandre Wang, Anqing Wermes, Norbert Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade |
| title | Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade |
| title_full | Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade |
| title_fullStr | Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade |
| title_full_unstemmed | Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade |
| title_short | Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade |
| title_sort | prototype active silicon sensor in 150 nm hr-cmos technology for atlas inner detector upgrade |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1088/1748-0221/11/02/C02045 http://cds.cern.ch/record/2119054 |
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