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Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon
It is shown experimentally that, in contrast to the stable configuration of (interstitial carbon)-(interstitial oxygen) complexes (CiOi), the corresponding metastable configuration (CiOi{*}) cannot be found in n-Si based structures by the method of capacitance spectroscopy. The rates of transformati...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1134/S1063782614110141 http://cds.cern.ch/record/2120336 |