Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes

Using forward current injection with densities in the range 15-30A/cm(2) we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasi...

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Detalles Bibliográficos
Autores principales: Makarenko, L F, Lastovskii, S B, Yakushevich, H S, Moll, M, Pintilie, I
Lenguaje:eng
Publicado: 2014
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1002/pssa.201431315
http://cds.cern.ch/record/2120379
Descripción
Sumario:Using forward current injection with densities in the range 15-30A/cm(2) we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasing with increasing irradiation dose. Additionally, some evidences have been obtained on the negative-U properties of the radiation-induced boron-oxygen complex.

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