Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes

Using forward current injection with densities in the range 15-30A/cm(2) we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasi...

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Detalles Bibliográficos
Autores principales: Makarenko, L F, Lastovskii, S B, Yakushevich, H S, Moll, M, Pintilie, I
Lenguaje:eng
Publicado: 2014
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1002/pssa.201431315
http://cds.cern.ch/record/2120379
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author Makarenko, L F
Lastovskii, S B
Yakushevich, H S
Moll, M
Pintilie, I
author_facet Makarenko, L F
Lastovskii, S B
Yakushevich, H S
Moll, M
Pintilie, I
author_sort Makarenko, L F
collection CERN
description Using forward current injection with densities in the range 15-30A/cm(2) we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasing with increasing irradiation dose. Additionally, some evidences have been obtained on the negative-U properties of the radiation-induced boron-oxygen complex.
id cern-2120379
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
record_format invenio
spelling cern-21203792019-09-30T06:29:59Zdoi:10.1002/pssa.201431315http://cds.cern.ch/record/2120379engMakarenko, L FLastovskii, S BYakushevich, H SMoll, MPintilie, IForward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodesXXUsing forward current injection with densities in the range 15-30A/cm(2) we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasing with increasing irradiation dose. Additionally, some evidences have been obtained on the negative-U properties of the radiation-induced boron-oxygen complex.oai:cds.cern.ch:21203792014
spellingShingle XX
Makarenko, L F
Lastovskii, S B
Yakushevich, H S
Moll, M
Pintilie, I
Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
title Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
title_full Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
title_fullStr Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
title_full_unstemmed Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
title_short Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
title_sort forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
topic XX
url https://dx.doi.org/10.1002/pssa.201431315
http://cds.cern.ch/record/2120379
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AT lastovskiisb forwardcurrentenhancedeliminationoftheradiationinducedboronoxygencomplexinsiliconnpdiodes
AT yakushevichhs forwardcurrentenhancedeliminationoftheradiationinducedboronoxygencomplexinsiliconnpdiodes
AT mollm forwardcurrentenhancedeliminationoftheradiationinducedboronoxygencomplexinsiliconnpdiodes
AT pintiliei forwardcurrentenhancedeliminationoftheradiationinducedboronoxygencomplexinsiliconnpdiodes

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