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Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes
Using forward current injection with densities in the range 15-30A/cm(2) we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasi...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1002/pssa.201431315 http://cds.cern.ch/record/2120379 |