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Silicon integrated circuits: advances in materials and device research

Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equili...

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Detalles Bibliográficos
Autor principal: Kahng, Dawon
Lenguaje:eng
Publicado: Academic Press 1981
Materias:
Acceso en línea:http://cds.cern.ch/record/2121382

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