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Silicon integrated circuits: advances in materials and device research
Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equili...
Autor principal: | Kahng, Dawon |
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Lenguaje: | eng |
Publicado: |
Academic Press
1981
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2121382 |
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