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Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation

Detalles Bibliográficos
Autores principales: Medenwaldt, R, Møller, S P, Tang-Petersen, S, Uggerhøj, Erik, Elsener, K, Hage-Ali, M, Siffert, P, Stoquert, J P, Sona, P, Maier, K
Lenguaje:eng
Publicado: 1990
Materias:
Acceso en línea:https://dx.doi.org/10.1016/0370-2693(90)91805-L
http://cds.cern.ch/record/212670

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