Cargando…
Hard photon yields from (70-240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation
Autores principales: | Medenwaldt, R, Møller, S P, Tang-Petersen, S, Uggerhøj, Erik, Elsener, K, Hage-Ali, M, Siffert, P, Stoquert, J P, Sona, P, Maier, K |
---|---|
Lenguaje: | eng |
Publicado: |
1990
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/0370-2693(90)91805-L http://cds.cern.ch/record/212670 |
Ejemplares similares
-
Hard-photon emission from 150 GeV electrons incident on Si, Ge and W single crystals near axial directions
por: Medenwaldt, R, et al.
Publicado: (1989) -
Detailed investigations of shower formation in Ge and W crystals traversed by 40 to 287 GeV/c electrons
por: Medenwaldt, R, et al.
Publicado: (1989) -
Coherent bremsstrahlung and channeling radiation from 40-GeV and 150-GeV electrons and positrons traversing Si and diamond single crystals near planar directions
por: Medenwaldt, R, et al.
Publicado: (1991) -
High efficiency bending of 450 GeV protons using channeling
por: Møller, S P, et al.
Publicado: (1991) -
Observation of high deflection efficiency and narrow energy loss distributions for 450 GeV protons channeled in a bent silicon crystal
por: Møller, S P, et al.
Publicado: (1993)