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NAND flash memory technologies
This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background an...
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Lenguaje: | eng |
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Wiley-IEEE Press
2016
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Acceso en línea: | http://cds.cern.ch/record/2131249 |
_version_ | 1780949784425660416 |
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author | Aritome, Seiichi |
author_facet | Aritome, Seiichi |
author_sort | Aritome, Seiichi |
collection | CERN |
description | This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are dis ussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the future NAND flash memory. |
id | cern-2131249 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2016 |
publisher | Wiley-IEEE Press |
record_format | invenio |
spelling | cern-21312492021-04-21T19:48:13Zhttp://cds.cern.ch/record/2131249engAritome, SeiichiNAND flash memory technologiesEngineeringThis book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are dis ussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the future NAND flash memory.Wiley-IEEE Pressoai:cds.cern.ch:21312492016 |
spellingShingle | Engineering Aritome, Seiichi NAND flash memory technologies |
title | NAND flash memory technologies |
title_full | NAND flash memory technologies |
title_fullStr | NAND flash memory technologies |
title_full_unstemmed | NAND flash memory technologies |
title_short | NAND flash memory technologies |
title_sort | nand flash memory technologies |
topic | Engineering |
url | http://cds.cern.ch/record/2131249 |
work_keys_str_mv | AT aritomeseiichi nandflashmemorytechnologies |