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NAND flash memory technologies

This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background an...

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Detalles Bibliográficos
Autor principal: Aritome, Seiichi
Lenguaje:eng
Publicado: Wiley-IEEE Press 2016
Materias:
Acceso en línea:http://cds.cern.ch/record/2131249
_version_ 1780949784425660416
author Aritome, Seiichi
author_facet Aritome, Seiichi
author_sort Aritome, Seiichi
collection CERN
description This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are dis ussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the future NAND flash memory.
id cern-2131249
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
publisher Wiley-IEEE Press
record_format invenio
spelling cern-21312492021-04-21T19:48:13Zhttp://cds.cern.ch/record/2131249engAritome, SeiichiNAND flash memory technologiesEngineeringThis book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are dis ussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the future NAND flash memory.Wiley-IEEE Pressoai:cds.cern.ch:21312492016
spellingShingle Engineering
Aritome, Seiichi
NAND flash memory technologies
title NAND flash memory technologies
title_full NAND flash memory technologies
title_fullStr NAND flash memory technologies
title_full_unstemmed NAND flash memory technologies
title_short NAND flash memory technologies
title_sort nand flash memory technologies
topic Engineering
url http://cds.cern.ch/record/2131249
work_keys_str_mv AT aritomeseiichi nandflashmemorytechnologies