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Silicon nanowire transistors

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits....

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Detalles Bibliográficos
Autores principales: Bindal, Ahmet, Hamedi-Hagh, Sotoudeh
Lenguaje:eng
Publicado: Springer 2016
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-319-27177-4
http://cds.cern.ch/record/2137850
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author Bindal, Ahmet
Hamedi-Hagh, Sotoudeh
author_facet Bindal, Ahmet
Hamedi-Hagh, Sotoudeh
author_sort Bindal, Ahmet
collection CERN
description This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types of memory on the same chip, such as capacitive cells and transistors with floating gates that can be used as DRAMs and Flash memories.
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
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spelling cern-21378502021-04-21T19:46:05Zdoi:10.1007/978-3-319-27177-4http://cds.cern.ch/record/2137850engBindal, AhmetHamedi-Hagh, SotoudehSilicon nanowire transistorsEngineeringThis book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types of memory on the same chip, such as capacitive cells and transistors with floating gates that can be used as DRAMs and Flash memories.Springeroai:cds.cern.ch:21378502016
spellingShingle Engineering
Bindal, Ahmet
Hamedi-Hagh, Sotoudeh
Silicon nanowire transistors
title Silicon nanowire transistors
title_full Silicon nanowire transistors
title_fullStr Silicon nanowire transistors
title_full_unstemmed Silicon nanowire transistors
title_short Silicon nanowire transistors
title_sort silicon nanowire transistors
topic Engineering
url https://dx.doi.org/10.1007/978-3-319-27177-4
http://cds.cern.ch/record/2137850
work_keys_str_mv AT bindalahmet siliconnanowiretransistors
AT hamedihaghsotoudeh siliconnanowiretransistors