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High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications

The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capabl...

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Autores principales: Mazza, Giovanni, Tavernier, Filip, Moreira, Paulo, Calvo, Daniela, De Remigis, Paolo, Olantera, Lauri, Soos, Csaba, Troska, Jan, Wyllie, Ken
Lenguaje:eng
Publicado: 2014
Materias:
Acceso en línea:https://dx.doi.org/10.1109/TNS.2014.2361679
http://cds.cern.ch/record/2137980
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author Mazza, Giovanni
Tavernier, Filip
Moreira, Paulo
Calvo, Daniela
De Remigis, Paolo
Olantera, Lauri
Soos, Csaba
Troska, Jan
Wyllie, Ken
author_facet Mazza, Giovanni
Tavernier, Filip
Moreira, Paulo
Calvo, Daniela
De Remigis, Paolo
Olantera, Lauri
Soos, Csaba
Troska, Jan
Wyllie, Ken
author_sort Mazza, Giovanni
collection CERN
description The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal-oxide semiconductor technology and are powered by a single 2.5 V supply. The power consumption of the core circuit is 89 mW for the GBLD and 55 mW for the LpGBLD.
id cern-2137980
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2014
record_format invenio
spelling cern-21379802019-09-30T06:29:59Zdoi:10.1109/TNS.2014.2361679http://cds.cern.ch/record/2137980engMazza, GiovanniTavernier, FilipMoreira, PauloCalvo, DanielaDe Remigis, PaoloOlantera, LauriSoos, CsabaTroska, JanWyllie, KenHigh-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP ApplicationsEngineeringThe gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal-oxide semiconductor technology and are powered by a single 2.5 V supply. The power consumption of the core circuit is 89 mW for the GBLD and 55 mW for the LpGBLD.oai:cds.cern.ch:21379802014
spellingShingle Engineering
Mazza, Giovanni
Tavernier, Filip
Moreira, Paulo
Calvo, Daniela
De Remigis, Paolo
Olantera, Lauri
Soos, Csaba
Troska, Jan
Wyllie, Ken
High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications
title High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications
title_full High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications
title_fullStr High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications
title_full_unstemmed High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications
title_short High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications
title_sort high-speed, radiation-tolerant laser drivers in 0.13 $\mu$m cmos technology for hep applications
topic Engineering
url https://dx.doi.org/10.1109/TNS.2014.2361679
http://cds.cern.ch/record/2137980
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