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High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications
The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capabl...
Autores principales: | , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2014
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/TNS.2014.2361679 http://cds.cern.ch/record/2137980 |
_version_ | 1780950038198878208 |
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author | Mazza, Giovanni Tavernier, Filip Moreira, Paulo Calvo, Daniela De Remigis, Paolo Olantera, Lauri Soos, Csaba Troska, Jan Wyllie, Ken |
author_facet | Mazza, Giovanni Tavernier, Filip Moreira, Paulo Calvo, Daniela De Remigis, Paolo Olantera, Lauri Soos, Csaba Troska, Jan Wyllie, Ken |
author_sort | Mazza, Giovanni |
collection | CERN |
description | The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal-oxide semiconductor technology and are powered by a single 2.5 V supply. The power consumption of the core circuit is 89 mW for the GBLD and 55 mW for the LpGBLD. |
id | cern-2137980 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2014 |
record_format | invenio |
spelling | cern-21379802019-09-30T06:29:59Zdoi:10.1109/TNS.2014.2361679http://cds.cern.ch/record/2137980engMazza, GiovanniTavernier, FilipMoreira, PauloCalvo, DanielaDe Remigis, PaoloOlantera, LauriSoos, CsabaTroska, JanWyllie, KenHigh-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP ApplicationsEngineeringThe gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal-oxide semiconductor technology and are powered by a single 2.5 V supply. The power consumption of the core circuit is 89 mW for the GBLD and 55 mW for the LpGBLD.oai:cds.cern.ch:21379802014 |
spellingShingle | Engineering Mazza, Giovanni Tavernier, Filip Moreira, Paulo Calvo, Daniela De Remigis, Paolo Olantera, Lauri Soos, Csaba Troska, Jan Wyllie, Ken High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications |
title | High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications |
title_full | High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications |
title_fullStr | High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications |
title_full_unstemmed | High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications |
title_short | High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\mu$m CMOS Technology for HEP Applications |
title_sort | high-speed, radiation-tolerant laser drivers in 0.13 $\mu$m cmos technology for hep applications |
topic | Engineering |
url | https://dx.doi.org/10.1109/TNS.2014.2361679 http://cds.cern.ch/record/2137980 |
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