Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron...

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Autores principales: Benoit, M., de Mendizabal, J.Bilbao, Casse, G., Chen, H., Chen, K., Di Bello, F.A., Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Lanni, F., Liu, H., Meng, L., Miucci, A., Muenstermann, D., Nessi, M., Peric, I., Rimoldi, M., Ristic, B., Pinto, M. Vicente Barrero, Vossebeld, J., Weber, M., Wu, W., Xu, L.
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/11/07/P07019
http://cds.cern.ch/record/2141989
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author Benoit, M.
de Mendizabal, J.Bilbao
Casse, G.
Chen, H.
Chen, K.
Di Bello, F.A.
Ferrere, D.
Golling, T.
Gonzalez-Sevilla, S.
Iacobucci, G.
Lanni, F.
Liu, H.
Meng, L.
Miucci, A.
Muenstermann, D.
Nessi, M.
Peric, I.
Rimoldi, M.
Ristic, B.
Pinto, M. Vicente Barrero
Vossebeld, J.
Weber, M.
Wu, W.
Xu, L.
author_facet Benoit, M.
de Mendizabal, J.Bilbao
Casse, G.
Chen, H.
Chen, K.
Di Bello, F.A.
Ferrere, D.
Golling, T.
Gonzalez-Sevilla, S.
Iacobucci, G.
Lanni, F.
Liu, H.
Meng, L.
Miucci, A.
Muenstermann, D.
Nessi, M.
Peric, I.
Rimoldi, M.
Ristic, B.
Pinto, M. Vicente Barrero
Vossebeld, J.
Weber, M.
Wu, W.
Xu, L.
author_sort Benoit, M.
collection CERN
description Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
id cern-2141989
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling cern-21419892023-03-14T20:15:42Zdoi:10.1088/1748-0221/11/07/P07019http://cds.cern.ch/record/2141989engBenoit, M.de Mendizabal, J.BilbaoCasse, G.Chen, H.Chen, K.Di Bello, F.A.Ferrere, D.Golling, T.Gonzalez-Sevilla, S.Iacobucci, G.Lanni, F.Liu, H.Meng, L.Miucci, A.Muenstermann, D.Nessi, M.Peric, I.Rimoldi, M.Ristic, B.Pinto, M. Vicente BarreroVossebeld, J.Weber, M.Wu, W.Xu, L.Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototypeDetectors and Experimental TechniquesActive pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.arXiv:1603.07798oai:cds.cern.ch:21419892016-03-24
spellingShingle Detectors and Experimental Techniques
Benoit, M.
de Mendizabal, J.Bilbao
Casse, G.
Chen, H.
Chen, K.
Di Bello, F.A.
Ferrere, D.
Golling, T.
Gonzalez-Sevilla, S.
Iacobucci, G.
Lanni, F.
Liu, H.
Meng, L.
Miucci, A.
Muenstermann, D.
Nessi, M.
Peric, I.
Rimoldi, M.
Ristic, B.
Pinto, M. Vicente Barrero
Vossebeld, J.
Weber, M.
Wu, W.
Xu, L.
Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
title Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
title_full Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
title_fullStr Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
title_full_unstemmed Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
title_short Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
title_sort results of the 2015 testbeam of a 180 nm ams high-voltage cmos sensor prototype
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/11/07/P07019
http://cds.cern.ch/record/2141989
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