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TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a can...

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Autor principal: Buckland, Matthew Daniel
Lenguaje:eng
Publicado: 2016
Materias:
Acceso en línea:http://cds.cern.ch/record/2159671
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author Buckland, Matthew Daniel
author_facet Buckland, Matthew Daniel
author_sort Buckland, Matthew Daniel
collection CERN
description The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.
id cern-2159671
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
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spelling cern-21596712019-09-30T06:29:59Zhttp://cds.cern.ch/record/2159671engBuckland, Matthew DanielTCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detectorParticle Physics - ExperimentThe requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.CLICdp-Note-2016-004oai:cds.cern.ch:21596712016
spellingShingle Particle Physics - Experiment
Buckland, Matthew Daniel
TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
title TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
title_full TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
title_fullStr TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
title_full_unstemmed TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
title_short TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
title_sort tcad simulations of high-voltage-cmos pixel structures for the clic vertex detector
topic Particle Physics - Experiment
url http://cds.cern.ch/record/2159671
work_keys_str_mv AT bucklandmatthewdaniel tcadsimulationsofhighvoltagecmospixelstructuresfortheclicvertexdetector