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TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a can...
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Lenguaje: | eng |
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2016
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Acceso en línea: | http://cds.cern.ch/record/2159671 |
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author | Buckland, Matthew Daniel |
author_facet | Buckland, Matthew Daniel |
author_sort | Buckland, Matthew Daniel |
collection | CERN |
description | The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection. |
id | cern-2159671 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2016 |
record_format | invenio |
spelling | cern-21596712019-09-30T06:29:59Zhttp://cds.cern.ch/record/2159671engBuckland, Matthew DanielTCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detectorParticle Physics - ExperimentThe requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.CLICdp-Note-2016-004oai:cds.cern.ch:21596712016 |
spellingShingle | Particle Physics - Experiment Buckland, Matthew Daniel TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector |
title | TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector |
title_full | TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector |
title_fullStr | TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector |
title_full_unstemmed | TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector |
title_short | TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector |
title_sort | tcad simulations of high-voltage-cmos pixel structures for the clic vertex detector |
topic | Particle Physics - Experiment |
url | http://cds.cern.ch/record/2159671 |
work_keys_str_mv | AT bucklandmatthewdaniel tcadsimulationsofhighvoltagecmospixelstructuresfortheclicvertexdetector |