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TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a can...
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| Lenguaje: | eng |
| Publicado: |
2016
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| Acceso en línea: | http://cds.cern.ch/record/2159671 |