Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade

The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under hi...

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Detalles Bibliográficos
Autores principales: Baselga, Marta, Pellegrini, Giulio, Quirion, David
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2016.11.033
http://cds.cern.ch/record/2195070
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author Baselga, Marta
Pellegrini, Giulio
Quirion, David
author_facet Baselga, Marta
Pellegrini, Giulio
Quirion, David
author_sort Baselga, Marta
collection CERN
description The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade, shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large $\eta$ angles.
id cern-2195070
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
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spelling cern-21950702023-06-29T04:25:10Zdoi:10.1016/j.nima.2016.11.033http://cds.cern.ch/record/2195070engBaselga, MartaPellegrini, GiulioQuirion, DavidSimulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgradeDetectors and Experimental TechniquesThe LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade, shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large $\eta$ angles.The LHC is expected to reach luminosities up to 3000 fb −1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non-passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade. It shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large η angles.The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade, shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large $\eta$ angles.arXiv:1606.08747oai:cds.cern.ch:21950702016-06-28
spellingShingle Detectors and Experimental Techniques
Baselga, Marta
Pellegrini, Giulio
Quirion, David
Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade
title Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade
title_full Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade
title_fullStr Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade
title_full_unstemmed Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade
title_short Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade
title_sort simulations of 3d-si sensors for the innermost layer of the atlas pixel upgrade
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2016.11.033
http://cds.cern.ch/record/2195070
work_keys_str_mv AT baselgamarta simulationsof3dsisensorsfortheinnermostlayeroftheatlaspixelupgrade
AT pellegrinigiulio simulationsof3dsisensorsfortheinnermostlayeroftheatlaspixelupgrade
AT quiriondavid simulationsof3dsisensorsfortheinnermostlayeroftheatlaspixelupgrade

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