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Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology

A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiatio...

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Detalles Bibliográficos
Autores principales: Kuczynska, Marika, Gozdur, Sabina, Bugiel, Szymon, Firlej, Miroslaw, Fiutowski, Tomasz, Idzik, Marek, Michelis, Stefano, Moron, Jakub, Przyborowski, Dominik, Swientek, Krzysztof
Lenguaje:eng
Publicado: 2015
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1109/MIXDES.2015.7208536
http://cds.cern.ch/record/2196507
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author Kuczynska, Marika
Gozdur, Sabina
Bugiel, Szymon
Firlej, Miroslaw
Fiutowski, Tomasz
Idzik, Marek
Michelis, Stefano
Moron, Jakub
Przyborowski, Dominik
Swientek, Krzysztof
author_facet Kuczynska, Marika
Gozdur, Sabina
Bugiel, Szymon
Firlej, Miroslaw
Fiutowski, Tomasz
Idzik, Marek
Michelis, Stefano
Moron, Jakub
Przyborowski, Dominik
Swientek, Krzysztof
author_sort Kuczynska, Marika
collection CERN
description A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, which show correct operation (<;1mV bandgap stability, linear PTAT) in teperature range -20 to 100 celsius degree.
id cern-2196507
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling cern-21965072019-09-30T06:29:59Zdoi:10.1109/MIXDES.2015.7208536http://cds.cern.ch/record/2196507engKuczynska, MarikaGozdur, SabinaBugiel, SzymonFirlej, MiroslawFiutowski, TomaszIdzik, MarekMichelis, StefanoMoron, JakubPrzyborowski, DominikSwientek, KrzysztofDevelopment of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm TechnologyXXA stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, which show correct operation (<;1mV bandgap stability, linear PTAT) in teperature range -20 to 100 celsius degree.oai:cds.cern.ch:21965072015
spellingShingle XX
Kuczynska, Marika
Gozdur, Sabina
Bugiel, Szymon
Firlej, Miroslaw
Fiutowski, Tomasz
Idzik, Marek
Michelis, Stefano
Moron, Jakub
Przyborowski, Dominik
Swientek, Krzysztof
Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology
title Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology
title_full Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology
title_fullStr Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology
title_full_unstemmed Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology
title_short Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology
title_sort development of radiation-hard bandgap reference and temperature sensor in cmos 130 nm technology
topic XX
url https://dx.doi.org/10.1109/MIXDES.2015.7208536
http://cds.cern.ch/record/2196507
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