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Ferroelectric-gate field effect transistor memories: device physics and applications

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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...

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Detalles Bibliográficos
Autores principales:	Park, Byung-Eun, Ishiwara, Hiroshi, Okuyama, Masanori, Sakai, Shigeki, Yoon, Sung-Min
Lenguaje:	eng
Publicado:	Springer 2016
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1007/978-94-024-0841-6 http://cds.cern.ch/record/2221153

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