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Parametrization of the radiation induced leakage current increase of NMOS transistors
The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies...
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| Lenguaje: | eng |
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2016
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| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/12/01/P01011 http://cds.cern.ch/record/2223208 |