Ανάπτυξη Ηλεκτρονικών Συστημάτων Λήψης Δεδομένων και Ελέγχου για ένα Πείραμα Συγκρουόμενων Δεσμών pp σε Ενέργεια Κέντρου Μάζας 14TeV (Πείραμα CMS στον Επιταχυντή LHC).

The architecture of a data acquisition (DAQ) and slow control system for the electromagnetic calorimeter preshower detector of the CMS (Compact Muon Solenoid) experiment - one of the LHC (Large Hadron Collider) experiments of CERN - has been studied. The system consists of the detector Front End electronics and of a data transmission system delivering the preshower information to the central DAQ system of the CMS experiment. The functionality of the Front End electronics is presented. The operation of the data transmission system, based on a ring topology, is described and the system design parameters are estimated. The system design criteria are the increased reliability, the use of radiation hard optoelectronic components, the low power consumption and the minimization of the number of Application Specific Integrated Circuits (ASICs) needed for building the system. The use of commercially available VLSI technologies for fabricating the ASICs of the proposed system capable to withstand the radiation levels in the preshower region has been investigated. The radiation hardness of a commercially available BiCMOS 0.8μ VLSI technology has been studied. The results show a threshold voltage shift of -130mV for the NMOS transistors and -190mV for the PMOS transistors, after an irradiation dose of 1.3MRad. The transconductance drops about 8% for the NMOS and 7% for the PMOS at the same irradiation level. A sudden increase of leakage current was observed after an irradiation dose of 14KRad. The study located the leakage currents originating from the turn on of parasitic FOXFET (Field Oxide FET) devices.