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Tunnel field-effect transistors (TFET): modelling and simulation

Detalles Bibliográficos
Autores principales: Mamidala, Jagadesh Kumar, Vishnoi, Rajat, Pandey, Pratyush
Lenguaje:eng
Publicado: Wiley 2016
Materias:
XX
Acceso en línea:http://cds.cern.ch/record/2230239
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author Mamidala, Jagadesh Kumar
Vishnoi, Rajat
Pandey, Pratyush
author_facet Mamidala, Jagadesh Kumar
Vishnoi, Rajat
Pandey, Pratyush
author_sort Mamidala, Jagadesh Kumar
collection CERN
id cern-2230239
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
publisher Wiley
record_format invenio
spelling cern-22302392021-04-21T19:27:21Zhttp://cds.cern.ch/record/2230239engMamidala, Jagadesh KumarVishnoi, RajatPandey, PratyushTunnel field-effect transistors (TFET): modelling and simulationXXWileyoai:cds.cern.ch:22302392016
spellingShingle XX
Mamidala, Jagadesh Kumar
Vishnoi, Rajat
Pandey, Pratyush
Tunnel field-effect transistors (TFET): modelling and simulation
title Tunnel field-effect transistors (TFET): modelling and simulation
title_full Tunnel field-effect transistors (TFET): modelling and simulation
title_fullStr Tunnel field-effect transistors (TFET): modelling and simulation
title_full_unstemmed Tunnel field-effect transistors (TFET): modelling and simulation
title_short Tunnel field-effect transistors (TFET): modelling and simulation
title_sort tunnel field-effect transistors (tfet): modelling and simulation
topic XX
url http://cds.cern.ch/record/2230239
work_keys_str_mv AT mamidalajagadeshkumar tunnelfieldeffecttransistorstfetmodellingandsimulation
AT vishnoirajat tunnelfieldeffecttransistorstfetmodellingandsimulation
AT pandeypratyush tunnelfieldeffecttransistorstfetmodellingandsimulation